 |  | | |
| PartNumber | FQPF2N60C | FQPF2N60C,2N60C, | FQPF2N60C,F2N60C, |
| Description | MOSFET 600V N-Channel Advance Q-FET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 4.7 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 23 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.07 mm | - | - |
| Length | 10.36 mm | - | - |
| Series | FQPF2N60C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 28 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 24 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | FQPF2N60C_NL | - | - |
| Unit Weight | 0.080072 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQPF2N60C | MOSFET 600V N-Channel Advance Q-FET | |
ON Semiconductor |
FQPF2N60C | MOSFET N-CH 600V 2A TO-220F | |
| FQPF2N60C,2N60C, | 全新原装 | ||
| FQPF2N60C,F2N60C, | 全新原装 | ||
| FQPF2N60C,FQP2N60C,2N60C | 全新原装 | ||
| FQPF2N60C/5N60C/8N60C | 全新原装 | ||
| FQPF2N60C/FQP2N60C | 全新原装 | ||
| FQPF2N60C/FQU2N60C/FQD2N | 全新原装 | ||
| FQPF2N60C/SSS2N60B | 全新原装 | ||
| FQPF2N60CTU | 全新原装 |