| PartNumber | FQPF6N90C | FQPF6N90CT | FQPF6N90 |
| Description | MOSFET 900V N-Ch Q-FET advance C-Series | MOSFET 900V N-Chan Advance Q-FET C-Series | MOSFET 900V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | 900 V | 900 V |
| Id Continuous Drain Current | 6 A | 6 A | 3.8 A |
| Rds On Drain Source Resistance | 2.3 Ohms | 2.3 Ohms | 1.93 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 56 W | 56 W | 56 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | QFET | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 16.07 mm | 16.3 mm | 16.3 mm |
| Length | 10.36 mm | 10.67 mm | 10.67 mm |
| Series | FQPF6N90C | FQPF6N90C | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | MOSFET |
| Width | 4.9 mm | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 5.5 S | - | 5.5 S |
| Fall Time | 60 ns | 60 ns | 55 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 90 ns | 90 ns | 80 ns |
| Factory Pack Quantity | 1000 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 55 ns | 55 ns | 95 ns |
| Typical Turn On Delay Time | 35 ns | 35 ns | 35 ns |
| Part # Aliases | FQPF6N90C_NL | - | FQPF6N90_NL |
| Unit Weight | 0.080072 oz | 0.080072 oz | 0.074950 oz |