 |  | | |
| PartNumber | FS75R07N2E4 | FS75R07N2E4B11BOSA1 | FS75R07N2E4BOSA1 |
| Description | IGBT Modules IGBT Module 75A 650V | MOD IGBT LOW PWR ECONO2-6 | MOD IGBT LOW PWR ECONO2-6 |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | IGBT-Inverter | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.55 V | - | - |
| Continuous Collector Current at 25 C | 75 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FS75R07N2E4BOSA1 SP000843932 | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
FS75R07N2E4 | IGBT Modules IGBT Module 75A 650V | |
| FS75R07N2E4_B11 | IGBT Modules IGBT Module 75A 650V | ||
| FS75R07N2E4B11BOSA1 | MOD IGBT LOW PWR ECONO2-6 | ||
| FS75R07N2E4BOSA1 | MOD IGBT LOW PWR ECONO2-6 | ||
| FS75R07N2E4_B11 | IGBT Modules IGBT Module 75A 650V | ||
| FS75R07N2E4 | IGBT Modules IGBT Module 75A 650V |