 | | | |
| PartNumber | FZ1600R12KE3 | FZ1600R12KF1 | FZ1600R12KE3NOSA1 |
| Description | IGBT Modules 1200V 1600A SINGLE | Insulated Gate Bipolar Transistor, 2300A I(C), 1200V V(BR)CES, N-Channel | |
| Manufacturer | Infineon | - | - |
| Product Category | Module | - | - |
| Mounting Style | Screw | - | - |
| Package Case | IHM 130X140-7 | - | - |
| Configuration | Dual Common Emitter Common Gate | - | - |
| Pd Power Dissipation | 7.8 kW | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | - | - |
| Continuous Collector Current at 25 C | 1600 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Maximum Gate Emitter Voltage | +/- 20 V | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| FZ1600R12KL4C | IGBT Modules 1200V 1600A SINGLE | ||
| FZ1600R12KE3 | IGBT Modules 1200V 1600A SINGLE | ||
| FZ1600R12KF1 | 全新原装 | ||
| FZ1600R12KF4 | IGBT Modules 1200V 1600A SINGLE | ||
| FZ1600R12KF4-S1 | 全新原装 | ||
| FZ1600R12KF4C | 全新原装 | ||
| FZ1600R12KF4S1 | 全新原装 | ||
| FZ1600R12KE3NOSA1 | Insulated Gate Bipolar Transistor, 2300A I(C), 1200V V(BR)CES, N-Channel | ||
Infineon Technologies |
FZ1600R12KL4CNOSA1 | IGBT MODULE 1200V 1600A | |
| FZ1600R12KF4S1NOSA1 | POWER MOD IGBT 1200V A-IHM130-2 |