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| PartNumber | FZ1800R17KE3_B2 | FZ1800R17KE3-B2 | FZ1800R17KE3_B2-HPFM |
| Description | IGBT Modules N-CH 1.7KV 2.85KA | Gate Driver for Infineon P# FZ1800R17KE3_B2, 1700V,1800A | |
| Manufacturer | Infineon Technologies | - | - |
| Product Category | IGBTs - Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | IHM190 | - | - |
| Configuration | Triple | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Collector Emitter Voltage VCEO Max | 1700 V | - | - |
| Continuous Collector Current at 25 C | 2850 A | - | - |
| Maximum Gate Emitter Voltage | +/- 20 V | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| FZ1800R17KF4 | IGBT Modules N-CH 1.7KV 1.8KA | ||
| FZ1800R17KE3_B2 | IGBT Modules N-CH 1.7KV 2.85KA | ||
| FZ1800R17KE3-B2 | 全新原装 | ||
| FZ1800R17KF6C-B2 | 全新原装 | ||
| FZ1800R17KE3_B2-HPFM | Gate Driver for Infineon P# FZ1800R17KE3_B2, 1700V,1800A | ||
Infineon Technologies |
FZ1800R17KE3B2NOSA1 | IGBT MODULE 1700V 1800A |