GS81302T18E

GS81302T18E-250 vs GS81302T18E-250I vs GS81302T18E-300

 
PartNumberGS81302T18E-250GS81302T18E-250IGS81302T18E-300
DescriptionSRAM 1.8 or 1.5V 8M x 18 144MSRAM 1.8 or 1.5V 8M x 18 144MSRAM 1.8 or 1.5V 8M x 18 144M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSN-N
Memory Size144 Mbit144 Mbit144 Mbit
Organization8 M x 188 M x 188 M x 18
Maximum Clock Frequency250 MHz250 MHz300 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max595 mA605 mA690 mA
Minimum Operating Temperature0 C- 40 C0 C
Maximum Operating Temperature+ 70 C+ 85 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-165BGA-165BGA-165
PackagingTrayTrayTray
Memory TypeDDR-IIDDR-IIDDR-II
SeriesGS81302T18EGS81302T18EGS81302T18E
TypeSigmaDDR-II B2SigmaDDR-II B2SigmaDDR-II B2
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity101010
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSigmaDDR-IISigmaDDR-IISigmaDDR-II
制造商 型号 描述 RFQ
GSI Technology
GSI Technology
GS81302T18E-300I SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-333I SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-350I SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-375 SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-250 SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-250I SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-375I SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-350M SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-300 SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-333 SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T18E-350 SRAM 1.8 or 1.5V 8M x 18 144M
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