 |  | | |
| PartNumber | HGTD7N60C3S9A | HGTD7N60C3 | HGTD7N60C3S |
| Description | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA | - Bulk (Alt: HGTD7N60C3S) |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Package / Case | TO-252AA-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.6 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 14 A | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTD7N60C3S | - | - |
| Packaging | Reel | - | - |
| Continuous Collector Current Ic Max | 14 A | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.6 mm | - | - |
| Width | 6.1 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 14 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTD7N60C3S9A_NL | - | - |
| Unit Weight | 0.009184 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTD7N60C3S9A | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | |
ON Semiconductor |
HGTD7N60C3S9A | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | |
| HGTD7N60C3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD7N60C3S | - Bulk (Alt: HGTD7N60C3S) | ||
| HGTD7N60C3S9A-NL | 全新原装 |