 |  | |
| PartNumber | HN1C01FE-GR,LF | HN1C01F-GR(TE85L,F |
| Description | Bipolar Transistors - BJT Transistor for Small Signal Amp | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A |
| Manufacturer | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Series | HN1C01 | HN1C01 |
| Packaging | Reel | Reel |
| Brand | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 4000 | 3000 |
| Subcategory | Transistors | Transistors |
| Mounting Style | - | SMD/SMT |
| Package / Case | - | SOT-26-6 |
| Transistor Polarity | - | NPN |
| Configuration | - | Dual |
| Collector Emitter Voltage VCEO Max | - | 50 V |
| Collector Base Voltage VCBO | - | 60 V |
| Emitter Base Voltage VEBO | - | 5 V |
| Collector Emitter Saturation Voltage | - | 0.1 V |
| Maximum DC Collector Current | - | 150 mA |
| Gain Bandwidth Product fT | - | 80 MHz |
| DC Current Gain hFE Max | - | 400 |
| Continuous Collector Current | - | 150 mA |
| DC Collector/Base Gain hfe Min | - | 120 |
| Pd Power Dissipation | - | 300 mW |
| Unit Weight | - | 0.001058 oz |
