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| PartNumber | HN4A56JU(TE85L,F) | HN4A51JTE85LF | HN4B01JE(TE85L,F) |
| Description | Bipolar Transistors - BJT USV PLN TRANSISTOR Pd=300mW F=1MHz | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | Bipolar Transistors - BJT Vceo=-50V Vceo=50V |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-25-5 | - |
| Transistor Polarity | - | PNP | NPN, PNP |
| Configuration | - | Dual | Dual |
| Collector Emitter Voltage VCEO Max | - | - 120 V | 50 V |
| Collector Base Voltage VCBO | - | - 120 V | 60 V |
| Emitter Base Voltage VEBO | - | - 5 V | 5 V |
| Collector Emitter Saturation Voltage | - | - 0.3 V | - |
| Maximum DC Collector Current | - | - 100 mA | 0.15 A |
| Gain Bandwidth Product fT | - | 100 MHz | 80 MHz |
| Series | - | HN4A51 | HN4B01 |
| DC Current Gain hFE Max | - | 700 | - |
| Continuous Collector Current | - | - 100 mA | - |
| DC Collector/Base Gain hfe Min | - | 200 | 120 |
| Pd Power Dissipation | - | 300 mW | 100 mW |
| Unit Weight | - | 0.000494 oz | - |
| Maximum Operating Temperature | - | - | + 150 C |
