HUFA76407DK

HUFA76407DK8T-F085 vs HUFA76407DK8 vs HUFA76407DK8T-NL

 
PartNumberHUFA76407DK8T-F085HUFA76407DK8HUFA76407DK8T-NL
DescriptionMOSFET 60V Dual N-Channel LogicLevel PwrMOSFET
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance90 mOhms--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelTape & Reel (TR)-
Height1.75 mm--
Length4.9 mm--
SeriesHUF76407DK_F085UltraFET-
Transistor Type2 N-Channel--
Width3.9 mm--
BrandON Semiconductor / Fairchild--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesHUFA76407DK8T_F085--
Unit Weight0.008127 oz--
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOP-
FET Type-2 N-Channel (Dual)-
Power Max-2.5W-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-330pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C---
Rds On Max Id Vgs-90 mOhm @ 3.8A, 10V-
Vgs th Max Id-3V @ 250μA-
Gate Charge Qg Vgs-11.2nC @ 10V-
制造商 型号 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HUFA76407DK8T-F085 MOSFET 60V Dual N-Channel LogicLevel PwrMOSFET
HUFA76407DK8T_F085 IGBT Transistors MOSFET 60V Dual N-Channel LogicLevel PwrMOSFET
HUFA76407DK8 全新原装
HUFA76407DK8T-NL 全新原装
HUFA76407DKBT 全新原装
ON Semiconductor
ON Semiconductor
HUFA76407DK8T MOSFET 2N-CH 60V 8-SOIC
HUFA76407DK8T-F085 MOSFET 2N-CH 60V 8-SOIC
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