 | | | |
| PartNumber | IDH10SG60C D10G60C | IDH10SG60C(D10G60C) | IDH10SG60C |
| Description | Schottky Diodes & Rectifiers SIC DIODEN | ||
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Diodes, Rectifiers - Single |
| Series | - | - | thinQ! |
| Product | - | - | Schottky Silicon Carbide Diodes |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IDH10SG60CXK IDH10SG60CXKSA1 SP000607040 |
| Unit Weight | - | - | 0.211644 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-220-2 |
| Technology | - | - | SiC |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | PG-TO220-2 |
| Configuration | - | - | Single |
| Speed | - | - | No Recovery Time > 500mA (Io) |
| Diode Type | - | - | Silicon Carbide Schottky |
| Current Reverse Leakage Vr | - | - | 90μA @ 600V |
| Voltage Forward Vf Max If | - | - | 2.1V @ 10A |
| Voltage DC Reverse Vr Max | - | - | 600V |
| Current Average Rectified Io | - | - | 10A (DC) |
| Reverse Recovery Time trr | - | - | 0ns |
| Capacitance Vr F | - | - | 290pF @ 1V, 1MHz |
| Operating Temperature Junction | - | - | -55°C ~ 175°C |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vf Forward Voltage | - | - | 2.1 V |
| Ir Reverse Current | - | - | 90 uA |
| If Forward Current | - | - | 10 A |
| Vrrm Repetitive Reverse Voltage | - | - | 600 V |
| Ifsm Forward Surge Current | - | - | 51 A |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IDH10SG60CXKSA2 | Schottky Diodes & Rectifiers SIC DIODES | |
| IDH10SG60CXKSA2 | DIODE SCHOTTKY 600V 10A TO220-2 | ||
| IDH10SG60CXKSA1 | DIODE SCHOTTKY 600V 10A TO220-2 | ||
| IDH10SG60C D10G60C | 全新原装 | ||
| IDH10SG60C(D10G60C) | 全新原装 | ||
| IDH10SG60CS | 全新原装 | ||
| IDH10SG60C | Schottky Diodes & Rectifiers SIC DIODEN |