 |  | | |
| PartNumber | IGD06N60TATMA1 | IGD06N60T | IGD06N60TS |
| Description | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop | IGBT Transistors LOW LOSS IGBT TECH 600V 6A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-252-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 12 A | - | - |
| Pd Power Dissipation | 88 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | TRENCHSTOP IGBT | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | IGBTs | - | - |
| Tradename | TRENCHSTOP | - | - |
| Part # Aliases | IGD06N60T IGD6N6TXT SP000960698 | - | - |
| Unit Weight | 0.011175 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IGD06N60TATMA1 | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop | |
| IGD06N60TATMA1 | IGBT 600V 12A 88W TO252-3 | ||
| IGD06N60T | IGBT Transistors LOW LOSS IGBT TECH 600V 6A | ||
| IGD06N60TS | 全新原装 |