 |  | | |
| PartNumber | IPA60R190E6 | IPA60R190E6 , 2SD1803S-T | IPA60R190E6 6R190E6 |
| Description | MOSFET N-Ch 650V 20.2A TO220FP-3 CoolMOS E6 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 20.2 A | - | - |
| Rds On Drain Source Resistance | 190 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 63 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 151 W | - | - |
| Configuration | Single | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Height | 16.15 mm | - | - |
| Length | 10.65 mm | - | - |
| Series | CoolMOS E6 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.85 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8 nS | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 90 nS | - | - |
| Part # Aliases | IPA60R190E6XKSA1 IPA6R19E6XK SP000797380 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA60R190E6 | MOSFET N-Ch 650V 20.2A TO220FP-3 CoolMOS E6 | |
| IPA60R190E6XKSA1 | MOSFET N-CH 600V 20.2A TO220 | ||
| IPA60R190E6 , 2SD1803S-T | 全新原装 | ||
| IPA60R190E6 6R190E6 | 全新原装 | ||
| IPA60R190E6 TK20A60 | 全新原装 | ||
| IPA60R190E6(6R190E6) | 全新原装 | ||
| IPA60R190E6,6R190E | 全新原装 | ||
| IPA60R190E6,IPA65R650CE, | 全新原装 | ||
| IPA60R190E6 | Darlington Transistors MOSFET N-Ch 650V 20.2A TO220FP-3 CoolMOS E6 |