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| PartNumber | IPA65R190CFD | IPA65R190C7XKSA1 | IPA65R190C6XKSA1 |
| Description | MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | MOSFET HIGH POWER BEST IN CLASS | MOSFET HIGH POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 17.5 A | 8 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 168 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 68 nC | 23 nC | - |
| Pd Power Dissipation | 34 W | 30 W | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 16.15 mm | 16.15 mm | 16.15 mm |
| Length | 10.65 mm | 10.65 mm | 10.65 mm |
| Series | CoolMOS CFD2 | CoolMOS C7 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.85 mm | 4.85 mm | 4.85 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6.4 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8.4 ns | 11 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPA65R190CFDXKSA1 IPA65R19CFDXK SP000905382 | IPA65R190C7 SP001080140 | IPA65R190C6XKSA1 SP000863892 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |
| Typical Turn Off Delay Time | - | 54 ns | - |
| Typical Turn On Delay Time | - | 11 ns | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA65R190CFD | MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | |
| IPA65R190C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R190E6 | MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6 | ||
| IPA65R190CFDXKSA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPA65R190E6XKSA1 | MOSFET N-CH 650V 20.2A TO220 | ||
| IPA65R190CFDXKSA1 | MOSFET N-CH 650V 17.5A TO220 | ||
| IPA65R190CFDXKSA2 | HIGH POWER_LEGACY | ||
| IPA65R190C6XKSA1 | MOSFET N-CH 650V 20.2A TO220 | ||
| IPA65R190C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
Infineon Technologies |
IPA65R190C6XKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPA65R190C6 TK20A60U | 全新原装 | ||
| IPA65R190C7 | Power Field-Effect Transistor, 8A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPA65R190CFD TK17A65D | 全新原装 | ||
| IPA65R190CFDA | 全新原装 | ||
| IPA65R190DE | 全新原装 | ||
| IPA65R190E6 TK20A60U | 全新原装 | ||
| IPA65R190E6(65E6190) | 全新原装 | ||
| IPA65R190E6,65E6190 | 全新原装 | ||
| IPA65R190CFD | Darlington Transistors MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | ||
| IPA65R190C6 | Darlington Transistors MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS C6 | ||
| IPA65R190E6 | RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6 |