IPB015N04N

IPB015N04N G vs IPB015N04NGATMA1 vs IPB015N04NG

 
PartNumberIPB015N04N GIPB015N04NGATMA1IPB015N04NG
DescriptionMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3Trans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R (Alt: SP000391522)
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance1.2 mOhms1.2 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge250 nC250 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min120 S120 S-
Fall Time13 ns13 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time64 ns64 ns-
Typical Turn On Delay Time40 ns40 ns-
Part # AliasesIPB015N04NGATMA1 IPB15N4NGXT SP000391522G IPB015N04N IPB15N4NGXT SP000391522-
Unit Weight0.139332 oz0.139332 oz-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB015N04N G MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IPB015N04NGATMA1 MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IPB015N04NGATMA1 MOSFET N-CH 40V 120A TO263-3
IPB015N04NG Trans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R (Alt: SP000391522)
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