 | |  | |
| PartNumber | IPB019N08N3 G | IPB019N08N3GATMA1 | IPB019N08N5ATMA1 |
| Description | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | MOSFET DIFFERENTIATED MOSFETS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-7 | TO-263-7 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 180 A | 180 A | - |
| Rds On Drain Source Resistance | 1.6 mOhms | 1.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 206 nC | 206 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 103 S | 103 S | - |
| Fall Time | 33 ns | 33 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 73 ns | 73 ns | - |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | 86 ns | - |
| Typical Turn On Delay Time | 28 ns | 28 ns | - |
| Part # Aliases | IPB019N08N3GATMA1 IPB19N8N3GXT SP000444110 | G IPB019N08N3 IPB19N8N3GXT SP000444110 | IPB019N08N5 SP001691928 |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB019N08N3 G | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | |
| IPB019N08N3GATMA1 | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | ||
| IPB019N08N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| IPB019N08N3GATMA1 | MOSFET N-CH 80V 180A TO263-7 | ||
| IPB019N08N5ATMA1 | DIFFERENTIATED MOSFETS | ||
| IPB019N08N | 全新原装 | ||
| IPB019N08N3 | 全新原装 | ||
| IPB019N08N3 G | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | ||
| IPB019N08N3G | Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: IPB019N08N3 G) | ||
| IPB019N08N3GS | 全新原装 |