IPB054N06N3 stock, IPB054N06N3, IPB054N06N3 G


PartNumber	IPB054N06N3 G	IPB054N06N3GATMA1
Description	MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3	MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-263-3	TO-263-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V
Id Continuous Drain Current	80 A	80 A
Rds On Drain Source Resistance	4.4 mOhms	4.4 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	82 nC	82 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	115 W	115 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	4.4 mm	4.4 mm
Length	10 mm	10 mm
Series	OptiMOS 3	OptiMOS 3
Transistor Type	1 N-Channel	1 N-Channel
Width	9.25 mm	9.25 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	47 S	47 S
Fall Time	9 ns	9 ns
Product Type	MOSFET	MOSFET
Rise Time	68 ns	68 ns
Factory Pack Quantity	1000	1000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	32 ns	32 ns
Typical Turn On Delay Time	24 ns	24 ns
Part # Aliases	IPB054N06N3GATMA1 IPB54N6N3GXT SP000446782	G IPB054N06N3 IPB54N6N3GXT SP000446782
Unit Weight	0.068654 oz	0.139332 oz

Search Part Number : "IPB054N06N3", Match & Start with "IPB054N06N3" - Total : 8

制造商	型号	描述
Infineon Technologies	IPB054N06N3 G	MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
	IPB054N06N3GATMA1	MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
	IPB054N06N3GATMA1	MOSFET N-CH 60V 80A TO263-3
	IPB054N06N3 G	IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
	IPB054N06N3GATMA1-CUT TAPE	全新原装
	IPB054N06N3-G	全新原装
	IPB054N06N3GATMA1 , 2SD1	全新原装
	IPB054N06N3G	Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: IPB054N06N3 G)

IPB054N06N3