IPB054N08

IPB054N08N3 G vs IPB054N08N3 vs IPB054N08N3G

 
PartNumberIPB054N08N3 GIPB054N08N3IPB054N08N3G
DescriptionMOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3MOSFET, N-CH, 80V, 80A, TO-263-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.6 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge69 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min52 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time66 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesIPB054N08N3GATMA1 IPB54N8N3GXT SP000395166--
Unit Weight0.139332 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB054N08N3GATMA1 MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
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IPB054N08N3GATMA1 MOSFET N-CH 80V 80A TO263-3
IPB054N08N3GATMA1-CUT TAPE 全新原装
IPB054N08N3GXT Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1)
IPB054N08N3 全新原装
IPB054N08N3G MOSFET, N-CH, 80V, 80A, TO-263-3
IPB054N08N3G,054N08N 全新原装
IPB054N08N3GS 全新原装
IPB054N08N3 G IGBT Transistors MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
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