 |  | | |
| PartNumber | IPB097N08N3 G | IPB097N08N3 | IPB097N08N3GS |
| Description | MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 70 A | - | - |
| Rds On Drain Source Resistance | 9.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 46 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | IPB097N08N3GATMA1 SP000474200 | - | - |
| Unit Weight | 0.068654 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB097N08N3 G | MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 | |
| IPB097N08N3 | 全新原装 | ||
| IPB097N08N3GS | 全新原装 | ||
| IPB097N08N3GXT | 全新原装 | ||
| IPB097N08N3G | Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3G) | ||
| IPB097N08N3GATMA1 | Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1) | ||
Infineon Technologies |
IPB097N08N3 G | IGBT Transistors MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 |