 | | | |
| PartNumber | IPB120N06S402ATMA2 | IPB120N06N G | IPB120N06S402ATMA1 |
| Description | MOSFET N-Ch 60V 120A D2PAK-2 | MOSFET N-Ch 60V 75A D2PAK-2 | MOSFET N-CHANNEL_55/60V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 120 A | 75 A | - |
| Rds On Drain Source Resistance | 2.4 mOhms | 11.7 mOhms | - |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | IPB120N06 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPB120N06S4-02 IPB12N6S42XT SP001028776 | IPB120N06NGXT | IPB120N06S4-02 IPB120N06S402XT SP000415560 |
| Unit Weight | 0.068654 oz | 0.139332 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 158 W | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 26 ns | - |
| Rise Time | - | 27 ns | - |
| Typical Turn Off Delay Time | - | 34 ns | - |
| Typical Turn On Delay Time | - | 14 ns | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB120N06S4H1ATMA2 | MOSFET N-Ch 60V 120A D2PAK-2 | |
| IPB120N06S403ATMA2 | MOSFET N-Ch 60V 120A D2PAK-2 | ||
| IPB120N06S402ATMA2 | MOSFET N-Ch 60V 120A D2PAK-2 | ||
| IPB120N06N G | MOSFET N-CH 60V 75A TO-263 | ||
| IPB120N06S402ATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB120N06S403ATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB120N06S4H1ATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB120N06S4H1ATMA2 | RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2 | ||
| IPB120N06S402ATMA2 | RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2 | ||
| IPB120N06S403ATMA2 | MOSFET N-CH 60V 120A TO263-3 | ||
Infineon Technologies |
IPB120N06S403ATMA1 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | |
| IPB120N06N G | MOSFET N-Ch 60V 75A D2PAK-2 | ||
| IPB120N06S402ATMA1 | MOSFET N-CHANNEL_55/60V | ||
| IPB120N06N | 全新原装 | ||
| IPB120N06NG | 全新原装 | ||
| IPB120N06NGINTR-ND | 全新原装 | ||
| IPB120N06S4-02 4N0602 | 全新原装 | ||
| IPB120N06S4-03 4N0603 | 全新原装 | ||
| IPB120N06S4-H1 | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: IPB120N06S4-H1) | ||
| IPB120N06S4-02 | Darlington Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | ||
| IPB120N06S4-03 | RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 |