IPB144

IPB144N12N3 G vs IPB144N12N3GATMA1 vs IPB144N12N3G

 
PartNumberIPB144N12N3 GIPB144N12N3GATMA1IPB144N12N3G
DescriptionMOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage120 V120 V-
Id Continuous Drain Current56 A56 A-
Rds On Drain Source Resistance12.3 mOhms12.3 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge49 nC49 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation107 W107 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min31 S31 S-
Fall Time4 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time16 ns16 ns-
Part # AliasesIPB144N12N3GATMA1 IPB144N12N3GXT SP000694166G IPB144N12N3 IPB144N12N3GXT SP000694166-
Unit Weight0.139332 oz0.139332 oz-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB144N12N3 G MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
IPB144N12N3GATMA1 MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
IPB144N12N3GATMA1 MOSFET N-CH 120V 56A TO263-3
IPB144N12N3G 全新原装
IPB144N12N3GS 全新原装
IPB144N12N3 G IGBT Transistors MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
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