 |  | | |
| PartNumber | IPB160N04S3-H2 | IPB160N04S3 | IPB160N04S3-HS |
| Description | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 160 A | - | - |
| Rds On Drain Source Resistance | 2.4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 214 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS-T | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 17 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 46 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | IPB160N04S3H2ATMA1 IPB16N4S3H2XT SP000254818 | - | - |
| Unit Weight | 0.056438 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB160N04S3-H2 | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T | |
| IPB160N04S3H2ATMA1 | MOSFET N-CH 40V 160A TO263-7 | ||
Infineon Technologies |
IPB160N04S3H2ATMA1 | MOSFET N-CHANNEL_30/40V | |
| IPB160N04S3 | 全新原装 | ||
| IPB160N04S3-HS | 全新原装 | ||
| IPB160N04S3H2 | 全新原装 | ||
| IPB160N04S3-H2 | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T |