IPB600

IPB600N25N3 G vs IPB600N20N3G vs IPB600N25N3G

 
PartNumberIPB600N25N3 GIPB600N20N3GIPB600N25N3G
DescriptionMOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263
ManufacturerInfineon-INF
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance51 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
TypeOptiMOS 3 Power-Transistor--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min24 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesIPB600N25N3GATMA1 IPB6N25N3GXT SP000676408--
Unit Weight0.139332 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB600N25N3 G MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IPB600N25N3GATMA1 MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IPB600N25N3GATMA1 MOSFET N-CH 250V 25A TO263-3
IPB600N20N3G 全新原装
IPB600N25N3 G Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G)
IPB600N25N3G Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263
IPB600N25N3GS 全新原装
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