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| PartNumber | IPB60R190C6 | IPB60R190C6 6R190C6 | IPB60R190C6 (6R190C6) |
| Description | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 20.2 A | - | - |
| Rds On Drain Source Resistance | 170 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 63 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 151 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS C6 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 110 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | IPB60R190C6ATMA1 IPB6R19C6XT SP000641916 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB60R190C6 | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | |
| IPB60R190C6ATMA1 | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | ||
| IPB60R190C6ATMA1 | MOSFET N-CH 600V 20.2A TO263 | ||
| IPB60R190C6 6R190C6 | 全新原装 | ||
| IPB60R190C6 | Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6) | ||
| IPB60R190C6 (6R190C6) | 全新原装 | ||
| IPB60R190C6S | 全新原装 |