IPB65R28

IPB65R280E6 vs IPB65R280E6ATMA1 vs IPB65R280C6ATMA1

 
PartNumberIPB65R280E6IPB65R280E6ATMA1IPB65R280C6ATMA1
DescriptionMOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS E6MOSFET N-Ch 700V 13.8A D2PAK-2MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V650 V
ConfigurationSingleSingleSingle
TradenameCoolMOSCoolMOSCoolMOS
PackagingReelReelReel
Height4.4 mm4.4 mm4.4 mm
Length10 mm10 mm10 mm
SeriesCoolMOS E6CoolMOS E6CoolMOS C6
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesIPB65R280E6ATMA1 IPB65R280E6XT SP000795274IPB65R280E6 SP000795274IPB65R280C6ATMA1 SP000745030
Unit Weight0.077603 oz0.068654 oz0.139332 oz
Id Continuous Drain Current-13.8 A13.8 A
Rds On Drain Source Resistance-280 mOhms250 mOhms
Vgs th Gate Source Threshold Voltage-3 V2.5 V
Vgs Gate Source Voltage-30 V20 V
Qg Gate Charge-45 nC45 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-104 W104 W
Fall Time-9 ns12 ns
Rise Time-9 ns11 ns
Typical Turn Off Delay Time-76 ns105 ns
Typical Turn On Delay Time-11 ns13 ns
Channel Mode--Enhancement
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB65R280E6 MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS E6
IPB65R280E6ATMA1 MOSFET N-Ch 700V 13.8A D2PAK-2
IPB65R280C6ATMA1 MOSFET N-CH 650V 13.8A TO263
IPB65R280E6ATMA1 MOSFET N-Ch 700V 13.8A D2PAK-2
Infineon Technologies
Infineon Technologies
IPB65R280C6ATMA1 MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6
IPB65R280C6 MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6
IPB65R280E6 - Bulk (Alt: IPB65R280E6)
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