 |  | | |
| PartNumber | IPB65R600C6ATMA1 | IPB65R600C6 65C6600 | IPB65R600C6 |
| Description | MOSFET N-CH 650V 7.3A TO263 | Darlington Transistors MOSFET N-Ch 700V 7.3A D2PAK-2 CoolMOS C6 | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | CoolMOS C6 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB65R600C6ATMA1 IPB65R600C6XT SP000794382 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 63 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 13 ns |
| Rise Time | - | - | 9 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 7.3 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 600 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 80 nS |
| Qg Gate Charge | - | - | 23 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB65R600C6ATMA1 | MOSFET N-CH 650V 7.3A TO263 | |
| IPB65R600C6 65C6600 | 全新原装 | ||
| IPB65R600C6 | Darlington Transistors MOSFET N-Ch 700V 7.3A D2PAK-2 CoolMOS C6 |