 |  |  | |
| PartNumber | IPB80N03S4L03ATMA1 | IPB80N03S4L02ATMA1 | IPB80N03S4L03 |
| Description | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | MOSFET N-CH 30V 80A TO263-3 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 140 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | XPB80N03 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 62 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | IPB80N03S4L-03 IPB8N3S4L3XT SP000274982 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB80N03S4L03ATMA1 | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | |
| IPB80N03S4L02ATMA1 | MOSFET N-CH 30V 80A TO263-3 | ||
| IPB80N03S4L03ATMA1 | MOSFET N-CH 30V 80A TO263-3 | ||
| IPB80N03S4L03 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |