PartNumber | IPD122N10N3GATMA1 | IPD110N12N3GATMA1 | IPD110N12N3GBUMA1 |
Description | MOSFET | MOSFET MV POWER MOS | MOSFET N-CH 120V 75A TO252-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TO-252-3 | PG-TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 120 V | - |
Id Continuous Drain Current | 59 A | 75 A | - |
Rds On Drain Source Resistance | 12.2 mOhms | 11 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 26 nC | 49 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 94 W | 136 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 29 S | 42 S | - |
Fall Time | 5 ns | 8 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 16 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 24 ns | 24 ns | - |
Typical Turn On Delay Time | 14 ns | 16 ns | - |
Part # Aliases | G IPD122N10N3 SP001127828 | G IPD110N12N3 SP001127808 | - |
Unit Weight | 0.017637 oz | 0.017284 oz | - |
制造商 | 型号 | 描述 | RFQ |
---|---|---|---|
Infineon Technologies |
IPD122N10N3GATMA1 | MOSFET | |
IPD110N12N3GATMA1 | MOSFET MV POWER MOS | ||
IPD135N03LGATMA1 | MOSFET N-Ch 30V 30A DPAK-2 | ||
IPD12CN10NGATMA1 | MOSFET MV POWER MOS | ||
IPD127N06L G | MOSFET N-Ch 60V 50A DPAK-2 | ||
IPD135N03L G | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3 | ||
IPD122N10N3GATMA1 | MOSFET N-CH 100V 59A | ||
IPD135N03LGBTMA1 | LV POWER MOS | ||
IPD12CNE8N G | MOSFET N-CH 85V 67A TO252-3 | ||
IPD12N03LB G | MOSFET N-CH 30V 30A TO-252 | ||
IPD110N12N3GATMA1 | MOSFET N-CH 120V 75A TO252-3 | ||
IPD110N12N3GBUMA1 | MOSFET N-CH 120V 75A TO252-3 | ||
IPD122N10N3GBTMA1 | MOSFET N-CH 100V 59A TO252-3 | ||
IPD127N06LGBTMA1 | MOSFET N-CH 60V 50A TO-252 | ||
IPD12CN10NGATMA1 | MOSFET N-CH 100V 67A TO252-3 | ||
IPD12CN10NGBUMA1 | MOSFET N-CH 100V 67A TO252-3 | ||
IPD135N03L G | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 | ||
IPD135N03LGATMA1 | MOSFET N-CH 30V 30A TO252-3 | ||
IPD135N03LGXT | MOSFET N-CH 30V 30A TO252-3 | ||
IPD127N06L G | MOSFET N-Ch 60V 50A DPAK-2 | ||
Infineon Technologies |
IPD135N03LGBTMA1 | MOSFET LV POWER MOS | |
IPD127N06LGBTMA1 | MOSFET MV POWER MOS | ||
IPD110N12N3G | 全新原装 | ||
IPD127N06L | 全新原装 | ||
IPD127N06LG | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0127OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | ||
IPD12CNE8N | 全新原装 | ||
IPD135N03L | 全新原装 | ||
IPD11N03L | 全新原装 | ||
IPD11NC10NG | 全新原装 | ||
IPD122N10N3 G | MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3 | ||
IPD122N10N3G | 100V,59A,N Channel Power MOSFET | ||
IPD122N10N3GB | 全新原装 | ||
IPD122N10N3GBTMA1 , 2SD2 | 全新原装 | ||
IPD127N06LGXT | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD127N06LGBTMA1) | ||
IPD12C10N G | 全新原装 | ||
IPD12CN10NGATMA1 , 2SD20 | 全新原装 | ||
IPD12CN10NGBUMA1 , 2SD21 | 全新原装 | ||
IPD12CNE8NG | 全新原装 | ||
IPD12N03 | 全新原装 | ||
IPD12N03L | 30 A, 30 V, 0.0147 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | ||
IPD12N03LAG | 全新原装 | ||
IPD12N03LB | 全新原装 | ||
IPD12N03LBG | 全新原装 | ||
IPD12S016PW | 全新原装 | ||
IPD135N03 | 全新原装 | ||
IPD135N03L,135N03L,IPD13 | 全新原装 | ||
IPD12CN10N G | MOSFET N-Ch 100V 67A DPAK-2 OptiMOS 2 | ||
IPD12CN10N | Infineon N-Channel Power MOSFET IPD12CN10N G - TO252-3 | ||
IPD12CN10NG | Trans MOSFET N-CH 100V 67A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD12CN10NG) | ||
IPD135N03LG | Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |