IPD12CN

IPD12CN10NGATMA1 vs IPD12CNE8N G vs IPD12CN10NGBUMA1

 
PartNumberIPD12CN10NGATMA1IPD12CNE8N GIPD12CN10NGBUMA1
DescriptionMOSFET MV POWER MOSMOSFET N-CH 85V 67A TO252-3MOSFET N-CH 100V 67A TO252-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current67 A--
Rds On Drain Source Resistance9.3 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge65 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min39 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesG IPD12CN10N SP001127806--
Unit Weight0.139332 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPD12CN10NGATMA1 MOSFET MV POWER MOS
IPD12CNE8N G MOSFET N-CH 85V 67A TO252-3
IPD12CN10NGATMA1 MOSFET N-CH 100V 67A TO252-3
IPD12CN10NGBUMA1 MOSFET N-CH 100V 67A TO252-3
IPD12CN10N Infineon N-Channel Power MOSFET IPD12CN10N G - TO252-3
IPD12CN10NG Trans MOSFET N-CH 100V 67A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD12CN10NG)
IPD12CN10NGATMA1 , 2SD20 全新原装
IPD12CN10NGBUMA1 , 2SD21 全新原装
IPD12CNE8N 全新原装
IPD12CNE8NG 全新原装
IPD12CN10N G MOSFET N-Ch 100V 67A DPAK-2 OptiMOS 2
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