IPD30N03S4

IPD30N03S4L-09 vs IPD30N03S4L-14 vs IPD30N03S4L09ATMA1

 
PartNumberIPD30N03S4L-09IPD30N03S4L-14IPD30N03S4L09ATMA1
DescriptionMOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2MOSFET N-CHANNEL_30/40V
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current30 A30 A-
Rds On Drain Source Resistance9 mOhms13.6 mOhms-
Vgs Gate Source Voltage16 V16 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation42 W31 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameOptiMOSOptiMOS-
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesOptiMOS-T2OptiMOS-T2-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time5 ns2 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time1 ns2 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12 ns12 ns-
Typical Turn On Delay Time3 ns3 ns-
Part # AliasesIPD30N03S4L09ATMA1 IPD3N3S4L9XT SP000415578IPD30N03S4L14ATMA1 IPD3N3S4L14XT SP000275919IPD30N03S4L-09 IPD3N3S4L9XT SP000415578
Unit Weight0.139332 oz0.139332 oz0.139332 oz
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPD30N03S4L-09 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
IPD30N03S4L-14 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
IPD30N03S4L09ATMA1 MOSFET N-CH 30V 30A TO252-3
IPD30N03S4L14ATMA1 MOSFET N-CH 30V 30A TO252-3
Infineon Technologies
Infineon Technologies
IPD30N03S4L09ATMA1 MOSFET N-CHANNEL_30/40V
IPD30N03S4L-09 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
IPD30N03S4L-14 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
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