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IPD50R1

IPD50R1K4CEAUMA1 vs IPD50R1K4CEBTMA1 vs IPD50R1K4CE

 
PartNumberIPD50R1K4CEAUMA1IPD50R1K4CEBTMA1IPD50R1K4CE
DescriptionMOSFET CONSUMERMOSFET N-Ch 500V 8.8A DPAK-2MOSFET N-Ch 500V 8.8A DPAK-2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Vds Drain Source Breakdown Voltage500 V500 V-
TradenameCoolMOSCoolMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesCoolMOS CEIPD50R1-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPD50R1K4CE SP001396808IPD50R1K4CEBTMA1 SP000992072-
Unit Weight0.139332 oz0.139332 oz-
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Id Continuous Drain Current-4.8 A-
Rds On Drain Source Resistance-1.26 Ohms-
Vgs th Gate Source Threshold Voltage-2.5 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-8.2 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-42 W-
Configuration-Single-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
Fall Time-30 ns-
Rise Time-6 ns-
Typical Turn Off Delay Time-23 ns-
Typical Turn On Delay Time-6.5 ns-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies 		IPD50R1K4CEAUMA1 MOSFET CONSUMER
IPD50R1K4CEBTMA1 MOSFET N-Ch 500V 8.8A DPAK-2
IPD50R1K4CE MOSFET N-Ch 500V 8.8A DPAK-2
IPD50R1K4CEBTMA1 , 2SD22 全新原装
Infineon Technologies
Infineon Technologies 		IPD50R1K4CEAUMA1 MOSFET N-CH 500V 3.1A PG-TO-252
IPD50R1K4CEBTMA1 MOSFET N-CH 500V 3.1A PG-TO-252
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