 |  | | |
| PartNumber | IPD60R170CFD7ATMA1 | IPD60R145CFD7ATMA1 | IPD60R180C7ATMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 14 A | 16 A | 13 A |
| Rds On Drain Source Resistance | 144 mOhms | 145 mOhms | 180 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 28 nC | 31 nC | 24 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 76 W | 83 W | 68 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Series | CoolMOS CFD7 | - | CoolMOS C7 |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 9 ns | 7.2 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 18 ns | 7 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 68 ns | 71 ns | 50 ns |
| Typical Turn On Delay Time | 31 ns | 27 ns | 9.3 ns |
| Part # Aliases | IPD60R170CFD7 SP001617934 | IPD60R145CFD7 SP001715664 | IPD60R180C7 SP001277630 |
| Height | - | - | 2.3 mm |
| Length | - | - | 6.5 mm |
| Width | - | - | 6.22 mm |
| Unit Weight | - | - | 0.139332 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R170CFD7ATMA1 | MOSFET HIGH POWER_NEW | |
| IPD60R145CFD7ATMA1 | MOSFET HIGH POWER_NEW | ||
| IPD60R180P7SAUMA1 | MOSFET CONSUMER | ||
| IPD60R180P7ATMA1 | MOSFET | ||
| IPD60R1K0CEAUMA1 | MOSFET CONSUMER | ||
| IPD60R1K5CEAUMA1 | MOSFET CONSUMER | ||
| IPD60R180C7ATMA1 | MOSFET HIGH POWER_NEW | ||
| IPD60R1K4C6ATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD60R145CFD7ATMA1 | HIGH POWER_NEW | ||
| IPD60R180C7ATMA1 | MOSFET N-CH TO252-3 | ||
| IPD60R180P7ATMA1 | MOSFET N-CH 650V 18A TO252-3 | ||
| IPD60R180P7SAUMA1 | MOSFET N-CH 600V 18A TO252-3 | ||
| IPD60R1K0CEATMA1 | MOSFET N-CH 600V TO-252-3 | ||
| IPD60R1K5CEAUMA1 | MOSFET N-CHANNEL 650V 5A TO252 | ||
| IPD60R180P7SE8228AUMA1 | Transistor MOSFET N-CH 650V 18A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R180P7SE8228AUMA1) | ||
| IPD60R170CFD7ATMA1 | MOSFET N-CH TO252-3 | ||
| IPD60R1K0CEAUMA1 | Trans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R | ||
| IPD60R1K4C6 | MOSFET N-CH 600V 3.2A TO252-3 | ||
| IPD60R1K4C6ATMA1 | MOSFET N-CH 600V 3.2A TO252-3 | ||
| IPD60R1K5CEATMA1 | IGBT Transistors MOSFET N-Ch 650V 3.1A DPAK-2 | ||
Infineon Technologies |
IPD60R1K0CEATMA1 | MOSFET N-Ch 600V 4.3A DPAK-2 | |
| IPD60R1K4C6 | MOSFET N-Ch 650V 3.2A DPAK-2 CoolMOS C6 | ||
| IPD60R1K5CEATMA1 | MOSFET N-Ch 600V 3.1A DPAK-2 | ||
| IPD60R180P7ATMA1-CUT TAPE | 全新原装 | ||
| IPD60R180P7SAUMA1-CUT TAPE | 全新原装 | ||
| IPD60R180C7 | SP001277630_COOL MOSPG-TO252-3-341_600V_ (Alt: IPD60R180C7) | ||
| IPD60R180C7 60C7180 | 全新原装 | ||
| IPD60R180P7 | N-CH 600V 18A 180mOhm DPAK | ||
| IPD60R180P7S | 全新原装 | ||
| IPD60R1K0CE | MOSFET CONSUMER | ||
| IPD60R1K0CE(1) | 全新原装 | ||
| IPD60R1K4C6 HF | 全新原装 | ||
| IPD60R1K4C6(60S1K0CE) | 全新原装 | ||
| IPD60R1K4C6BTMA1 | Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 (Alt: IPD60R1K4C6) | ||
| IPD60R1K5CEATMA1 , 2SD23 | 全新原装 |