PartNumber | IPD60R3K3C6ATMA1 | IPD60R3K3C6 | IPD60R3K4CEAUMA1 |
Description | MOSFET N-Ch 650V 1.7A DPAK-2 | MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6 | MOSFET N-CH 650V 2.6A TO252-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 1.7 A | 1.7 A | - |
Rds On Drain Source Resistance | 3.3 Ohms | 2.97 Ohms | - |
Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | - |
Vgs Gate Source Voltage | 30 V | 20 V | - |
Qg Gate Charge | 4.6 nC | 4.6 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 18.1 W | 18.1 W | - |
Configuration | Single | Single | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | CoolMOS C6 | CoolMOS C6 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 60 ns | 60 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 10 ns | 10 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 40 ns | 40 ns | - |
Typical Turn On Delay Time | 8 ns | 8 ns | - |
Part # Aliases | IPD60R3K3C6 SP001117718 | IPD60R3K3C6BTMA1 SP000799130 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
RoHS | - | Y | - |
Channel Mode | - | Enhancement | - |