 |  | | |
| PartNumber | IPD90P04P4-05 | IPD90P04P4-05 4P0405 | IPD90P04P4-05(4P0405) |
| Description | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 4.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 118 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS-P2 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 7 ns | - | - |
| Typical Turn On Delay Time | 3 ns | - | - |
| Part # Aliases | IPD90P04P405ATMA1 IPD9P4P45XT SP000671164 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD90P04P4-05 | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | |
| IPD90P04P4-05 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| IPD90P04P4-05 4P0405 | 全新原装 | ||
| IPD90P04P4-05(4P0405) | 全新原装 |