 |  | | |
| PartNumber | IPG20N10S4L-35 | IPG20N10S4L22ATMA1 | IPG20N10S4L22AATMA1 |
| Description | MOSFET MOSFET | MOSFET MOSFET | MOSFET N-CHANNEL_100+ |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 20 A | 20 A | 20 A |
| Rds On Drain Source Resistance | 35 mOhms | 20 mOhms, 20 mOhms | 20 mOhms, 20 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | 1.1 V |
| Vgs Gate Source Voltage | 10 V | 16 V | 16 V |
| Qg Gate Charge | 13.4 nC | 27 nC, 27 nC | 27 nC, 27 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 43 W | 60 W | 60 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | XPG20N10 | IPG20N10 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 13 ns | 18 ns, 18 ns | 18 ns, 18 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2 ns | 3 ns, 3 ns | 3 ns, 3 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | 30 ns, 30 ns | 30 ns, 30 ns |
| Typical Turn On Delay Time | 3 ns | 5 ns, 5 ns | 5 ns, 5 ns |
| Part # Aliases | IPG20N10S4L35ATMA1 IPG2N1S4L35XT SP000859022 | IPG20N10S4L-22 IPG2N1S4L22XT SP000866570 | IPG20N10S4L-22A SP001091984 |
| Unit Weight | - | 0.003439 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPG20N10S4L-35 | MOSFET MOSFET | |
| IPG20N10S4L35ATMA1 | MOSFET MOSFET | ||
| IPG20N10S4L22ATMA1 | MOSFET MOSFET | ||
| IPG20N10S4L22AATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPG20N10S4L35AATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPG20N10S4L22AATMA1 | MOSFET 2N-CH 100V 20A TDSON-8 | ||
| IPG20N10S4L22ATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N10S4L35AATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N10S4L35ATMA1 | MOSFET 2N-CH 8TDSON | ||
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