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| PartNumber | IPG20N06S4L11AATMA1 | IPG20N06S4L11ATMA2 | IPG20N06S4L11ATMA1 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET | MOSFET N-CHANNEL_55/60V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TDSON-8 | - | TDSON-8 |
| Number of Channels | 2 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 15.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 53 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 65 W | - | - |
| Configuration | Dual | - | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | - | 1.27 mm |
| Length | 5.9 mm | - | 5.9 mm |
| Series | OptiMOS-T2 | - | OptiMOS-T2 |
| Transistor Type | 2 N-Channel | - | 1 N-Channel |
| Width | 5.15 mm | - | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | - | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 58 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | IPG20N06S4L-11A SP001200162 | IPG20N06S4L-11 SP001404020 | IPG20N06S4L-11 IPG2N6S4L11XT SP000705550 |