 |  | | |
| PartNumber | IPI076N12N3 G | IPI076N12N3 | IPI076N12N3G |
| Description | MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 7.6 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 76 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 188 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 nS | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 39 nS | - | - |
| Part # Aliases | IPI076N12N3GAKSA1 IPI76N12N3GXK SP000652738 | - | - |
| Unit Weight | 0.084199 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI076N12N3 G | MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3 | |
| IPI076N12N3GAKSA1 | MOSFET N-CH 120V 100A TO262-3 | ||
| IPI076N12N3GXK | Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI076N12N3GAKSA1) | ||
| IPI076N12N3 | 全新原装 | ||
| IPI076N12N3G | 全新原装 | ||
| IPI076N12N3 G | Darlington Transistors MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3 |