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| PartNumber | IPI126N10N3 | IPI126N10N3G | IPI126N10N3 G |
| Description | Trans MOSFET N-CH 100V 58A 3-Pin TO-262 Tube - Bulk (Alt: IPI126N10N3 G) | IGBT Transistors MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3 | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS 3 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPI126N10N3GXKSA1 SP000683072 |
| Unit Weight | - | - | 0.073511 oz |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-262-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 94 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 5 ns |
| Rise Time | - | - | 8 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 58 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 12.3 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 24 ns |
| Typical Turn On Delay Time | - | - | 14 ns |
| Channel Mode | - | - | Enhancement |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| IPI126N10N3 | 全新原装 | ||
| IPI126N10N3G | Trans MOSFET N-CH 100V 58A 3-Pin TO-262 Tube - Bulk (Alt: IPI126N10N3 G) | ||
| IPI126N10N3GXKSA1 | - Bulk (Alt: IPI126N10N3GXKSA1) | ||
Infineon Technologies |
IPI126N10N3 G | IGBT Transistors MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3 |