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| PartNumber | IPI530N15N3 G | IPI530N15N3GXKSA1 | IPI530N15N3G |
| Description | MOSFET N-Ch 150V 21A I2PAK-3 | MOSFET N-Ch 150V 21A I2PAK-3 | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
| Id Continuous Drain Current | 21 A | 21 A | - |
| Rds On Drain Source Resistance | 44 mOhms | 44 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 12 nC | 12 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 68 W | 68 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | IPI530N15 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 11 S | 11 S | - |
| Fall Time | 3 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Part # Aliases | IPI530N15N3GXKSA1 SP000807642 | G IPI530N15N3 SP000807642 | - |
| Unit Weight | 0.070548 oz | 0.073511 oz | 0.073511 oz |
| Part Aliases | - | - | G IPI530N15N3 SP000807642 |
| Package Case | - | - | TO-262-3 |
| Id Continuous Drain Current | - | - | 21 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Rds On Drain Source Resistance | - | - | 53 mOhms |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI530N15N3 G | MOSFET N-Ch 150V 21A I2PAK-3 | |
| IPI530N15N3GXKSA1 | MOSFET N-Ch 150V 21A I2PAK-3 | ||
| IPI530N15N3GXKSA1 | MOSFET N-CH 150V 21A TO262-3 | ||
| IPI530N15N3 G | MOSFET N-Ch 150V 21A I2PAK-3 | ||
| IPI530N15N3G | 全新原装 |