 |  | | |
| PartNumber | IPI80N04S3-03 | IPI80N04S3-04 | IPI80N04S3-06 |
| Description | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 3.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 188 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Series | OptiMOS-T | OptiMOS-T | OptiMOS-T |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 14 ns | 10 ns | 10 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 17 ns | 12 ns | 10 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 39 ns | 30 ns | 20 ns |
| Typical Turn On Delay Time | 25 ns | 20 ns | 15 ns |
| Part # Aliases | IPI80N04S303AKSA1 IPI8N4S33XK SP000261238 | - | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
| Part Aliases | - | IPI80N04S304AKSA1 IPI80N04S304XK SP000261226 | IPI80N04S306AKSA1 IPI80N04S306XK SP000261237 |
| Package Case | - | I2PAK-3 | I2PAK-3 |
| Pd Power Dissipation | - | 136 W | 100 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 80 A | 80 A |
| Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
| Rds On Drain Source Resistance | - | 4.2 mOhms | 6.1 mOhms |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI80N04S3-03 | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | |
| IPI80N04S3-03 | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | ||
| IPI80N04S3-04 | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | ||
| IPI80N04S3-06 | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T |