IPL65R23

IPL65R230C7 vs IPL65R230C7AUMA1 vs IPL65R230C7 , 2SD2472

 
PartNumberIPL65R230C7IPL65R230C7AUMA1IPL65R230C7 , 2SD2472
DescriptionMOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7MOSFET N-CH 650V 10A 4VSON
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseVSON-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance230 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation67 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingReel--
Height1.1 mm--
Length8 mm--
SeriesCoolMOS C7--
Transistor Type1 N-Channel--
Width8 mm--
BrandInfineon Technologies--
Fall Time22 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time71 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesIPL65R230C7AUMA1 SP001032728--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPL65R230C7 MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
IPL65R230C7AUMA1 MOSFET N-CH 650V 10A 4VSON
IPL65R230C7 , 2SD2472 全新原装
IPL65R230C7 RF Bipolar Transistors MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
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