 |  | |
| PartNumber | IPN80R1K2P7ATMA1 | IPN80R1K4P7ATMA1 |
| Description | MOSFET LOW POWER_NEW | MOSFET LOW POWER_NEW |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-3 | PG-SOT-223-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V |
| Id Continuous Drain Current | 4.5 A | 4 A |
| Rds On Drain Source Resistance | 1 Ohms | 1.2 Ohms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V |
| Vgs Gate Source Voltage | 30 V | 20 V |
| Qg Gate Charge | 11 nC | 10 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 6.8 W | 7 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | 8 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 40 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns |
| Part # Aliases | IPN80R1K2P7 SP001664998 | IPN80R1K4P7 SP001657528 |
| Tradename | - | CoolMOS |
| Series | - | CoolMOS P7 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPN80R1K2P7ATMA1 | MOSFET LOW POWER_NEW | |
| IPN80R1K4P7ATMA1 | MOSFET LOW POWER_NEW | ||
| IPN80R1K2P7ATMA1 | COOLMOS P7 800V SOT-223 | ||
| IPN80R1K4P7ATMA1 | MOSFET N-CHANNEL 800V 4A SOT223 | ||
| IPN80R1K2P7ATMA1-CUT TAPE | 全新原装 | ||
| IPN80R1K4P7ATMA1-CUT TAPE | 全新原装 | ||
| IPN80R1K4P7 | 全新原装 |