 |  | | |
| PartNumber | IPP029N06N | IPP029N06N 029N06N | IPP029N06N3G |
| Description | MOSFET N-Ch 60V 100A TO220-3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 66 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 80 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | IPP029N06NAKSA1 IPP29N6NXK SP000917404 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP029N06N | MOSFET N-Ch 60V 100A TO220-3 | |
| IPP029N06NAKSA1 | MOSFET N-Ch 60V 100A TO220-3 | ||
| IPP029N06NAKSA1 | Darlington Transistors MOSFET N-Ch 60V 100A TO220-3 | ||
| IPP029N06N | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 | ||
| IPP029N06N 029N06N | 全新原装 | ||
| IPP029N06N3G | 全新原装 |