 |  | | |
| PartNumber | IPP048N12N3 G | IPP048N12N | IPP048N12N3 |
| Description | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 4.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 137 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 162 S, 81 S | - | - |
| Fall Time | 19 ns | 19 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns | 55 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 64 ns | 64 ns | - |
| Typical Turn On Delay Time | 31 ns | 31 ns | - |
| Part # Aliases | IPP048N12N3GXKSA1 IPP48N12N3GXK SP000652734 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Part Aliases | - | IPP048N12N3GXK IPP048N12N3GXKSA1 SP000652734 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 300 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Vds Drain Source Breakdown Voltage | - | 120 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 4.8 mOhms | - |
| Qg Gate Charge | - | 137 nC | - |
| Forward Transconductance Min | - | 162 S 81 S | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP048N12N3 G | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | |
| IPP048N12N3GXKSA1 | MOSFET N-CH 120V 100A TO220-3 | ||
Infineon Technologies |
IPP048N12N3GXKSA1 | MOSFET MV POWER MOS | |
| IPP048N12N | 全新原装 | ||
| IPP048N12N3 | 全新原装 | ||
| IPP048N12N3 G | Trans MOSFET N-CH 120V 100A 3-Pin TO-220 Tube - Bulk (Alt: IPP048N12N3 G) | ||
| IPP048N12N3G | 全新原装 | ||
| IPP048N12N3G 048N12N | 全新原装 |