 | |  | |
| PartNumber | IPP114N12N3 G | IPP114N03L G | IPP114N12N3GXKSA1 |
| Description | MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 | MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3 | MOSFET N-CH 120V 75A TO220-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | 30 V | - |
| Id Continuous Drain Current | 75 A | 30 A | - |
| Rds On Drain Source Resistance | 11.4 mOhms | 11.4 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 49 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | 38 W | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 7 nS | 2.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 36 nS | 3 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 nS | 15 ns | - |
| Part # Aliases | IPP114N12N3GXK IPP114N12N3GXKSA1 SP000652740 | IPP114N03LGHKSA1 SP000264168 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Channel Mode | - | Enhancement | - |
| Typical Turn On Delay Time | - | 3.8 ns | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP114N12N3 G | MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 | |
| IPP114N12N3GXKSA1 | MOSFET N-CH 120V 75A TO220-3 | ||
| IPP114N03L G | MOSFET N-CH 30V 30A TO-220-3 | ||
Infineon Technologies |
IPP114N03L G | MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3 | |
| IPP114N03LG | Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP114N03LGHKSA1 | Trans MOSFET N-CH 30V 30A 3-Pin TO-220 Tube - Bulk (Alt: IPP114N03LGHKSA1) | ||
| IPP114N12N | 全新原装 | ||
| IPP114N12N3 | 全新原装 | ||
| IPP114N12N3 G(SP00065274 | 全新原装 | ||
| IPP114N12N3-114N12N | 全新原装 | ||
| IPP114N12N3G | Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP114N12N3G,114N12N | 全新原装 | ||
| IPP114N12N3 G | Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 |