IPP147N12N3

IPP147N12N3 G vs IPP147N12N3G vs IPP147N12N3G(147N12)

 
PartNumberIPP147N12N3 GIPP147N12N3GIPP147N12N3G(147N12)
DescriptionMOSFET N-Ch 120V 56A TO220-3 OptiMOS 3Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current56 A--
Rds On Drain Source Resistance14.7 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge37 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation107 W--
ConfigurationSingle--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time4 nS--
Product TypeMOSFET--
Rise Time9 nS--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 nS--
Part # AliasesIPP147N12N3GXK IPP147N12N3GXKSA1 SP000652742--
Unit Weight0.084199 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPP147N12N3 G MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3
IPP147N12N3GXKSA1 MOSFET N-CH 120V 56A TO220-3
Infineon Technologies
Infineon Technologies
IPP147N12N3GXKSA1 MOSFET MV POWER MOS
IPP147N12N3GXK Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP147N12N3GXKSA1)
IPP147N12N3G Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP147N12N3G(147N12) 全新原装
IPP147N12N3G,147N12N 全新原装
IPP147N12N3 G Darlington Transistors MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3
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