 |  | | |
| PartNumber | IPP60R520C6XKSA1 | IPP60R520C6 | IPP60R520CP |
| Description | MOSFET N-Ch 600V 8.1A TO220-3 CoolMOS C6 | Darlington Transistors MOSFET N-Ch 600V 8.1A TO220-3 CoolMOS C6 | IGBT Transistors MOSFET N-Ch 600V 6.8A TO220-3 CoolMOS CP |
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | IC Chips | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 8.1 A | - | - |
| Rds On Drain Source Resistance | 470 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 66 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS C6 | CoolMOS C6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 14 ns | 14 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 85 ns | 85 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | IPP60R520C6XKSA1 SP000645068 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Part Aliases | - | IPP60R520C6XK IPP60R520C6XKSA1 SP000645068 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 66 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8.1 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Rds On Drain Source Resistance | - | 520 mOhms | - |
| Qg Gate Charge | - | 23.4 nC | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP60R520C6XKSA1 | MOSFET N-Ch 600V 8.1A TO220-3 CoolMOS C6 | |
Infineon Technologies |
IPP60R520C6XKSA1 | MOSFET N-CH 600V 8.1A TO220 | |
| IPP60R520CPXKSA1 | MOSFET N-CH 650V 6.8A TO-220 | ||
| IPP60R520C6 | Darlington Transistors MOSFET N-Ch 600V 8.1A TO220-3 CoolMOS C6 | ||
| IPP60R520CP | IGBT Transistors MOSFET N-Ch 600V 6.8A TO220-3 CoolMOS CP |