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| PartNumber | IPW60R099C7XKSA1 | IPW60R099C7 | IPW60R099C7(SP001298004) |
| Description | MOSFET HIGH POWER_NEW | - Bulk (Alt: IPW60R099C7) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 22 A | - | - |
| Rds On Drain Source Resistance | 85 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 42 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 110 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | CoolMOS C7 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 4.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 54 ns | - | - |
| Typical Turn On Delay Time | 11.8 ns | - | - |
| Part # Aliases | IPW60R099C7 SP001298004 | - | - |
| Unit Weight | 1.340411 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW60R099C7XKSA1 | MOSFET HIGH POWER_NEW | |
| IPW60R099C7XKSA1 | MOSFET N-CH 600V 22A TO247-3 | ||
| IPW60R099C7 | - Bulk (Alt: IPW60R099C7) | ||
| IPW60R099C7(SP001298004) | 全新原装 |