 |  | | |
| PartNumber | IPW60R299CPFKSA1 | IPW60R299CP PB-FREE | IPW60R299CP |
| Description | MOSFET LOW POWER_LEGACY | Darlington Transistors MOSFET N-Ch 650V 11A TO247-3 CoolMOS CP | |
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | FETs - Single |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | - | Tube |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPW60R299CPFKSA1 SP000103251 | - | - |
| Unit Weight | 1.340411 oz | - | 1.340411 oz |
| Series | - | - | CoolMOS CP |
| Part Aliases | - | - | IPW60R299CPFKSA1 IPW60R299CPXK SP000103251 |
| Package Case | - | - | TO-247-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 96 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 5 ns |
| Rise Time | - | - | 5 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 11 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Rds On Drain Source Resistance | - | - | 299 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 40 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| Channel Mode | - | - | Enhancement |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW60R299CPFKSA1 | MOSFET LOW POWER_LEGACY | |
| IPW60R299CP PB-FREE | 全新原装 | ||
| IPW60R299CP | Darlington Transistors MOSFET N-Ch 650V 11A TO247-3 CoolMOS CP | ||
Infineon Technologies |
IPW60R299CPFKSA1 | MOSFET N-CH 600V 11A TO-247 |