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| PartNumber | IPW65R080CFDA | IPW65R080CFD | IPW65R080CFDAFKSA1 |
| Description | MOSFET N-Ch 650V 43.3A TO247-3 | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | MOSFET N-Ch 650V 43.3A TO247-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 43.3 A | 43.3 A | 43.3 A |
| Rds On Drain Source Resistance | 72 mOhms | 72 mOhms | 72 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | 3.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 161 nC | 167 nC | 161 nC |
| Minimum Operating Temperature | - 40 C | - 55 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 391 W | 391 W | 391 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 21.1 mm | 21.1 mm | 21.1 mm |
| Length | 16.13 mm | 16.13 mm | 16.13 mm |
| Series | CoolMOS CFDA | CoolMOS CFD2 | CoolMOS CFDA |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.21 mm | 5.21 mm | 5.21 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | 6 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 ns | 18 ns | 18 ns |
| Factory Pack Quantity | 240 | 240 | 240 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 85 ns | 85 ns | 85 ns |
| Typical Turn On Delay Time | 20 ns | 20 ns | 20 ns |
| Part # Aliases | IPW65R080CFDAFKSA1 IPW65R8CFDAXK SP000875806 | IPW65R080CFDFKSA1 IPW65R8CFDXK SP000745036 | IPW65R080CFDA IPW65R8CFDAXK SP000875806 |
| Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW65R095C7 | MOSFET HIGH POWER_NEW | |
| IPW65R080CFDA | MOSFET N-Ch 650V 43.3A TO247-3 | ||
| IPW65R080CFDFKSA1 | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | ||
| IPW65R080CFDAFKSA1 | MOSFET N-Ch 650V 43.3A TO247-3 | ||
| IPW65R095C7XKSA1 | MOSFET HIGH POWER_NEW | ||
| IPW65R099C6 | MOSFET N-Ch 700V 38A TO247-3 | ||
| IPW65R080CFDFKSA2 | MOSFET | ||
| IPW65R080CFDFKSA2 | HIGH POWER_LEGACY | ||
| IPW65R080CFD | Trans MOSFET N-CH 650V 43.3A 3-Pin TO-247 Tube (Alt: IPW65R080CFD) | ||
| IPW65R080CFDA | Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 | ||
| IPW65R080CFDFKSA1 | MOSFET N-CH 700V 43.3A TO247 | ||
| IPW65R095C7 | - Bulk (Alt: IPW65R095C7) | ||
| IPW65R095C7XKSA1 | MOSFET N-CH 650V 24A TO247 | ||
| IPW65R099C6 | Trans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube (Alt: SP000896396) | ||
| IPW65R080CFDAFKSA1 | RF Bipolar Transistors MOSFET N-Ch 650V 43.3A TO247-3 | ||
| IPW65R099C6FKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 38A TO247-3 | ||
| IPW65R080CFDAXK | Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1) | ||
| IPW65R080CFD , 2SJ287 | 全新原装 | ||
| IPW65R080CFD 65F6080 | 全新原装 | ||
| IPW65R080CFD(SP000745036 | 全新原装 | ||
| IPW65R080CFDA 65F6080A | 全新原装 | ||
| IPW65R080CFDA IPW65R080C | 全新原装 | ||
| IPW65R080CFDS | 全新原装 | ||
| IPW65R099C6,65C6099 | 全新原装 | ||
| IPW65R099C6S | 全新原装 |